Chemical and Electrochemical Oxidation of Silicon Surfaces Functionalized with APTES: The Role of Surface Roughness in the AuNPs Anchoring Kinetics

EDUARDO A. CORONADO

JOURNAL OF PHYSICAL CHEMISTRY C

AMER CHEMICAL SOC

Lugar: Washington; Año: 2013 vol. 117 p. 11317 - 11317

1932-7447

xidation of Si(111) surfaces is a procedure widely used for their further functionalization with 3-aminopropyltriethoxysilane (APTES). In the present work, the formation of silicon oxide is carried out by chemical and electrochemical oxidation of the hydrogenated-silicon surfaces, giving rise to Si-OxChem and Si-OxEchem surfaces, respectively. Both surfaces are then functionalized with APTES solution to form an  aminopropylsilane (APS) film, using two quite different concentrations of APTES (0.001 and 0.1% v/v), to compare two limiting situations. At the lowest APTES concentration, the comparison of the kinetics of gold nanoparticles (AuNPs) anchoring process on both surfaces is found to be quite different, not only in the initial rate of NPs anchoring but  also in the maximum percentage of coverage. In contrast, the kinetics behavior is almost the same when the surfaces are modified with the highest APTES concentration, reaching the same value of surface coverage. The different or si